| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668312 | Surface and Coatings Technology | 2011 | 6 Pages |
Abstract
⺠Single-stage mass loss and moderate vapor pressure favor TMSB as an ideal precursor. ⺠Temperature dependence of vapor pressure and enthalpies of TMSB is new. ⺠Promising SiC coating obtained from TMSB and TMSA as precursors at 573 K. ⺠More hydrogen in TMSB is favorable for pure SiC formation than MTS.
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Authors
J. Selvakumar, D. Sathiyamoorthy, K.S. Nagaraja,