| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668342 | Surface and Coatings Technology | 2012 | 8 Pages |
Abstract
⺠The importance of minimizing oxygen contamination during film growth is stressed. ⺠We outline reliable methods for an efficient minimization of oxygen contamination. ⺠Nearly stoichiometric ZrN films are obtained, with a very low oxygen contamination. ⺠Bias voltage is suitably chosen to allow preferential sputtering of absorbed oxygen. ⺠Optimal bias is higher than nitrogen sputtering threshold and lower than argon one.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Rizzo, M.A. Signore, D. Valerini, D. Altamura, A. Cappello, L. Tapfer,