Effects of annealing conditions and thickness ratio of Si/Al films on the Hall carrier mobility, Al carrier concentration, and nanovoids formed in the metal-induced Si crystallization of Si/Al/Si/SiO2/glass specimens

► The μc-Al grains diffused into the two adjacent Si layers with a fairly even distribution over the entire sandwich structure. ► The Hall carrier mobility of the specimen annealing at 600 °C for of 15 minutes of a-Si(500 nm)/μc-Al(50 nm)/a-Si(500 nm) was 80.1 cm2/Vs and the Al concentration was 1.5 × 1018/cm3; voids were not found in the sandwich structure. ► A thick Al film in combination with two thick a-Si layers leads to a high carrier mobility when the annealing temperature is sufficiently high.