| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10668437 | Surface and Coatings Technology | 2011 | 6 Pages |
Abstract
⺠Silicon SiBCN films were deposited by ion beam assisted deposition (IBAD) method. ⺠The films were amorphous, fully dense and showed high hardness up to 33 GPa. ⺠Low friction coefficient of about 0.3 may be the result of C nanoclusters. ⺠The material has an onset of rapid thermal oxidation at 1150 °C in air. ⺠The films have a Tauc bandgap between 2.2 and 2.8 eV and are insulating.
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Authors
V.M. Vishnyakov, A.P. Ehiasarian, V.V. Vishnyakov, P. Hovsepian, J.S. Colligon,