Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10668526 | Surface and Coatings Technology | 2011 | 4 Pages |
Abstract
⺠Sputter target oxidation level in reactive (R) HIPIMS affects the process behaviour. ⺠Enhanced sputter target oxidation during R HIPIMS plays the major role. ⺠Hysteresis and process window are reduced if starting target surface is not clean.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Martynas Audronis, Victor Bellido-Gonzalez,