Etching mechanisms during plasma jet machining of silicon carbide

Furthermore, etching experiments under sample heating have been carried out for different [CF4]/[O2] mixtures to obtain the activation energy of fluorine and oxygen with the surface. A minimum in the etching rate at a temperature of approximately 150 °C has been found. Therefore XPS and SEM analyses have been carried out for surfaces etched at sample temperatures of 25 °C, 150 °C and 400 °C showing an elevated fraction of silicon oxides and film thickness at 150 °C.