Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10669610 | Thin Solid Films | 2015 | 4 Pages |
Abstract
We have focused on measurements of the surface stress in Si(111) as a function of 7Â ÃÂ 7 reconstruction by comparison with the hydrogen (H)-terminated Si(111) 1Â ÃÂ 1 surface. In order to obtain information on both the surface stress and the surface reconstruction simultaneously, we have combined the surface-curvature and the reflection-high-energy-electron-diffraction instrumentations in an identical ultrahigh vacuum system. The stress evolution shows a decrease of tensile stress corresponding to the formation of H-termination at the beginning of the atomic H exposure of Si(111) 7Â ÃÂ 7 surface. After the above treatment, a complete transformation of the surface structure occurs from the reconstructed surface to the 1Â ÃÂ 1 one. As a result, we find the H-terminated Si(111) 1Â ÃÂ 1 surface releases 1.7Â N/m (=Â J/m2), or (1.4Â eV/(1Â ÃÂ 1 unit cell)), of the surface energy from the strong tensile Si(111) 7Â ÃÂ 7 reconstruction.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hidehito Asaoka, Yuki Uozumi,