Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10669697 | Thin Solid Films | 2014 | 6 Pages |
Abstract
In semiconductor and Micro-Electro-Mechanical Systems production, thick resist films are indispensable for circuit formation, chemical mechanical planarization, or wafer-level packaging applications. We investigate multiple metrology protocols that aim at meeting the needs for fast, accurate, full-wafer determination of the thickness of up to 100 μm thick resist layers deposited on silicon or glass wafers. We found very effective to use a two-step strategy consisting of: i/ an accurate determination of the optical characteristics of the photoresist based on prism-coupling technique, and ii/ the fast, full-wafer measurement of the wafers of interest, using high-resolution spectroscopic reflectometry (SR). The robustness of this strategy increased when analyzing the SR data with a Fourier transform (FT) based algorithm which combines FT-based filtering around the thickness of interest with spectral matching to improve measurement performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Nolot, A. André, C. Scibetta, M. Poulingue, L. Levin, L. Vignoud, H. Isselé,