| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669776 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠Pulsed-RF PECVD for low temperature (150 °C) preparation of silicon nitride. ⺠Pulsed-RF PECVD leads to longer surface diffusion length during growth. ⺠This in turn leads to film smoothening and densification at low temperatures. ⺠Microstructural improvement leads to higher breakdown voltage. ⺠Silicon nitride as TFT gate dielectric leads to excellent device performance.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Arman Ahnood, Yuji Suzuki, Arun Madan, Arokia Nathan,