| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669779 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠InN thin films with different thicknesses and good quality were synthesized. ⺠Semiconductor behavior and some contamination by In2O3 were found. ⺠The band gap was close to 1.8 eV compared to 0.7 eV found in pure InN. ⺠The electronic structure for this material was determined.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.V.S. da Silva, D.G.F. David, I. Pepe, A. Ferreira da Silva, J.S. de Almeida, A.L. Gazoto, A.O. dos Santos, L.P. Cardoso, E.A. Meneses, D.L. Graybill, K.M. Mertes,