Formation of Hf- and Ta-aluminates by reactive ion beam mixing of X/Al interfaces (XÂ =Â Hf or Ta)

► Hf- and Ta-aluminates thin films grown by reactive ion beam mixing of interfaces. ► Study of the kinetics of growth, composition and electronic structure of the films. ► Reactive ion beam mixing kinetics of two stages found by factor analysis. ► Changes in electronic structure occur during the formation of mixed oxide species.