Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10669790 | Thin Solid Films | 2012 | 5 Pages |
Abstract
Ultra thin films of pure β-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using β-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/β-Si3N4/Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the β-Si3N4 / Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 ± 0.05 eV below that of β-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be ~ 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/β-Si3N4 interface formation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, A.T. Kalghatgi, S.B. Krupanidhi,