Article ID Journal Published Year Pages File Type
10669806 Thin Solid Films 2012 4 Pages PDF
Abstract
► Degradation of tunnel in sub 30 nm flash memory devices is studied. ► Plasma process induced damage of tunnel oxide during plasma etching is characterized. ► Plasma etching results in degradation of tunnel oxide due to electrical field stress. ► Degradation was strongly dependent on plasma non-uniformity.
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Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices
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