| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669808 | Thin Solid Films | 2012 | 4 Pages |
Abstract
The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R0A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 μm and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Ahmetoglu Afrailov,