Transient stages during the chemical vapour deposition of silicon carbide from CH3SiCl3/H2: impact on the physicochemical and interfacial properties of the coatings

Article ID	Journal	Published Year	Pages	File Type
10669828	Thin Solid Films	2012	13 Pages	PDF

Abstract

âºInvestigation of transient stages during chemical vapour deposition of SiC. âºCorrelation with gas phase composition and deposition rate. âºCorrelation with nature of gradient Si-C coatings (ÏTr). âºSynthesis of SiC/ÏTr/SiC bilayers. âºAdhesion assessment of SiC/ÏTr/SiC bilayers.

Keywords

Gas phase analysis Scratch testing Chemical vapour deposition Microstructure Silicon carbide Kinetics Adhesion

Related Topics

Physical Sciences and Engineering Materials Science Nanotechnology

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Transient stages during the chemical vapour deposition of silicon carbide from CH3SiCl3/H2: impact on the physicochemical and interfacial properties of the coatings

Authors

Georges Chollon, Francis Langlais, Maud Placide, Patrick Weisbecker,