| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669831 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠Atomic layer deposition (ALD) of Ru and N-incorporated Ru film using N2/H2 plasma. ⺠The growth rate of 0.057 nm/cycle and negligible incubation cycle. ⺠A low resistivity of Ru (~ 16.5 μΩ cm) at the deposition temperature of 270 °C. ⺠Electroplating of Cu on a 10-nm-thick ALD-Ru film.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tae Eun Hong, Ki-Yeung Mun, Sang-Kyung Choi, Ji-Yoon Park, Soo-Hyun Kim, Taehoon Cheon, Woo Kyoung Kim, Byoung-Yong Lim, Sunjung Kim,