Article ID Journal Published Year Pages File Type
10669837 Thin Solid Films 2012 4 Pages PDF
Abstract
► The samples were grown by plasma-assisted molecular beam epitaxy. ► The GaN epilayer was grown on sapphire substrate. ► The samples were characterized by X-ray diffraction and atomic force microscopy. ► The sample quality was improved by gradient buffer layer.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
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