| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669845 | Thin Solid Films | 2012 | 4 Pages |
Abstract
âºHybrid orientation structure of CeO2(100) and (110) areas is realized on Si(100). ⺠Electron beam induced orientation selective epitaxial growth is employed. ⺠Transition regions are found in between the two different orientation areas. ⺠The transition region width decreases with lowering resistivity of Si substrates.
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Physical Sciences and Engineering
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Authors
Tomoyasu Inoue, Shigenari Shida,