| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669852 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠Fast crystallization of Ge-doped SbTe alloys for phase change memory devices. ⺠The dielectric function of the thin films in the infrared range is measured. ⺠Accurate band gap energy values, resistivity, and mean scattering time are obtained. ⺠The effective mass of holes is estimated. ⺠In amorphous or crystalline films, optical gap decreased with increasing Sb content.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tae Dong Kang, Kyung Ik Sim, Jae Hoon Kim, Zhe Wu, Byung-ki Cheong, Hosun Lee,