| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669861 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠Single transistor dynamic random-access memory (1T-DRAM) was demonstrated. ⺠Silicon-on-insulator (SOI) and SiGe-on-insulator (SGOI) 1T-DRAM were investigated. ⺠SGOI 1T-DRAM showed superior electric performance to SOI 1T-DRAM. ⺠High-temperature annealing improved the performance of SGOI 1T-DRAM.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Seung-Min Jung, Won-Ju Cho,