| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669863 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠3D strain of n-channel field-effect transistors by source/drain SiC film stressors. ⺠Simulation methodology is validated by related experiments. ⺠Stress effect on gate length dependence is analyzed. ⺠Mobility gain of gate length dependence is calculated. ⺠Increasing the length of dummy active of diffusion will enhance device performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Chang-Chun Lee, Shu-Tong Chang, Bing-Fong Hsieh,