| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669869 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠LiNbO3/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. ⺠Normally-off characteristics were shown in the FFETs. ⺠The operation mechanisms of the FFETs were presented.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L.Z. Hao, J. Zhu, Y.J. Liu, X.W. Liao, S.L. Wang, J.J. Zhou, C. Kong, H.Z. Zeng, Y. Zhang, W.L. Zhang, Y.R. Li,