| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669881 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠Ti-Zn mixed oxide thin films are synthesized by atomic layer deposition (ALD). ⺠ALD is performed at low temperature (90 °C). ⺠Thin film composition is controlled by the amount of each metal oxide cycles. ⺠Sample crystallization is studied during annealing by in situ X-ray diffraction. ⺠Electrical resistivity of crystalline samples increase with Ti content.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.K. Hazra, L. Borgese, S. Federici, E. Bontempi, M. Ferrari, V. Ferrari, J.R. Plaisier, X. Santarelli, G. Zerauschek, A. Lausi, L.E. Depero,