| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669886 | Thin Solid Films | 2012 | 7 Pages |
Abstract
⺠Sulfurization of Cu-Bi thin films with elemental sulfur vapor. ⺠Effect of heating rate and temperature on structure and morphology. ⺠High heating rates are detrimental at temperatures higher than ~ 300 °C. ⺠Contrary to literature on H2S sulfurization, no Bi depletion was observed. ⺠Band-gap energy suitable for photovoltaic use, but efficiency needs improvement.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
D. Colombara, L.M. Peter, K. Hutchings, K.D. Rogers, S. Schäfer, J.T.R. Dufton, M.S. Islam,