| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669899 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠Low temperature preparation of graphene by the annealing of Ni/SiC structures. ⺠Raman spectroscopy used for the analyzing of graphene layers. ⺠Optimal structure Ni(200)/SiC annealed at 1080 °C for 10 s. ⺠Graphene prepared in the form of 3-4 carbon monolayers.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
P. MacháÄ, T. Fidler, S. CichoÅ, L. MiÅ¡ková,