| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669913 | Thin Solid Films | 2012 | 7 Pages |
Abstract
⺠Boron-doped polycrystalline diamond films were grown on Si3N4 ceramic substrates. ⺠System pressure and CH4/H2 flow ratio influence the films' electrical conductivity. ⺠Boron and silicon impurities as well as C2H3+ are incorporated in the films. ⺠Si3N4 substrates guaranteed high adhesion levels to boron-doped diamond films.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.A. Neto, E.L. Silva, C.A. Ghumman, O.M. Teodoro, A.J.S. Fernandes, F.J. Oliveira, R.F. Silva,