| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669923 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠SiN, N-SiC O-SiC and SiC dielectric films were irradiated with synchrotron radiation. ⺠The charge was determined from the surface potential after 9.5 eV irradiation. ⺠Location of trapped charges found from surface potential as a function of thickness.
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Authors
H. Sinha, J.L. Lauer, G.A. Antonelli, Y. Nishi, J.L. Shohet,