| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669938 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠In0.01Ga0.99As layers were grown on offcut Si substrate using Ge as buffer layer. ⺠Dislocation density of Ge-on-Si was inverse proportional to thickness square root. ⺠GaAs islands were observed in the 100 nm region on In0.01Ga0.99As/Ge interface. ⺠Unintended Ge-doping as low as 1016 cmâ 3 was observed in In0.01Ga0.99As layer.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Weixuan Hu, Buwen Cheng, Chunlai Xue, Shaojian Su, Zhi Liu, Yaming Li, Qiming Wang, Liangjun Wang, Jiangqing Liu, Jie Ding, Guijiang Lin, Zhidong Lin,