| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669944 | Thin Solid Films | 2012 | 4 Pages |
Abstract
âºWe report the quantitative analysis of interfacial oxides at the SiO2/InSb interface. âºInterfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. âºAs-grown and annealed samples showed different compositions of oxide phases. âºConsiderable reduction of antimony oxide phases was observed during annealing. âºInterface trap densities at the SiO2/InSb interface were calculated.
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Physical Sciences and Engineering
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Authors
Jaeyel Lee, Sehun Park, Jungsub Kim, Changjae Yang, Sujin Kim, Chulkyun Seok, Jinsub Park, Euijoon Yoon,