| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669952 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠Annealing in various atmospheres (vacuum, N2, and O2) for hydrothermal seed-layers. ⺠Carrier transport in ZnO nanorods (NRs)/p-Si heterojunction diodes (HJDs). ⺠Vacuum-annealed ZnO NRs/p-Si HJDs demonstrate recombination-tunnelling transport. ⺠N2- and O2-annealed ZnO NRs/p-Si HJDs reveal diffusion-recombination transport. ⺠Large rectification ratio of 1.9 Ã 105 in the O2-annealed ZnO NRs/p-Si HJDs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J.D. Hwang, Y.H. Chen,