| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669965 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠We report on bipolar-type resistive switching memory performance in WO3 + δ films. ⺠Resistive switching properties of WO3 + δ films depend on oxygen contents. ⺠The low-resistance state is due to metallic conducting channels. ⺠The switching mechanism stems from electroforming and rupture of conducting filaments.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
B.U. Jang, A.I. Inamdar, Jongmin Kim, Woong Jung, Hyunsik Im, Hyungsang Kim, J.P. Hong,