| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670054 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠Al2O3 thin films were deposited by DC reactive magnetron sputtering. ⺠The films were found to be amorphous up to annealing temperature of 550 C. ⺠An increase in rms roughness of the films was observed with annealing. ⺠Al-Al2O3-Al thin film capacitors were fabricated and dielectric constant was 7.5. ⺠The activation energy decreased with increase in frequency.
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Authors
Prasanna S., Mohan Rao G., Jayakumar S., Kannan M.D., Ganesan V.,