| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670060 | Thin Solid Films | 2012 | 6 Pages |
Abstract
âºGe films grown in reduced pressure chemical vapor deposition. âºHigh quality Ge obtained using a “three-step growth” approach. âºAnneal in H2 reduced threading dislocation density and surface roughness. âºAnnealing time impacts the surface morphology of the Ge epitaxial film. âºFurther improvement in surface roughness through chemical mechanical polishing.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Y.H. Tan, C.S. Tan,