| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670070 | Thin Solid Films | 2012 | 6 Pages |
Abstract
âºAlN thin films were deposited by plasma-enhanced ALD using TMA and NH3. âºConstant growth rate of ~ 0.86 Ã
/cycle was observed from 100 to 200 °C. âºAlN films were polycrystalline with a hexagonal wurtzite structure. âºFilms exhibited an optical band edge at ~ 5.8 eV. âºFilms were highly transparent in the visible region of the spectrum.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Cagla Ozgit, Inci Donmez, Mustafa Alevli, Necmi Biyikli,