| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670086 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ⺠Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ⺠Room-temperature photoluminescence emission at 1.58 eV. ⺠InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
S. Valdueza-Felip, J. Ibáñez, E. Monroy, M. González-Herráez, L. Artús, F.B. Naranjo,