Article ID Journal Published Year Pages File Type
10670104 Thin Solid Films 2012 5 Pages PDF
Abstract
► Device-quality CIGS thin films are prepared by a three-stage evaporation process. ► The surface layer shows a gradually Cu-poor compositional distribution. ► The thickness of the surface layer is in the range of 50-100 nm. ► The surface and the bulk of the material exhibit similar crystal structure. ► The surface layer contains a large amount of dislocations.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
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