Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670175 | Thin Solid Films | 2011 | 8 Pages |
Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
R. Darwich, P. Roca i Cabarrocas,