Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670200 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Long-term stable p-type ZnO films were grown by atomic layer deposition on semi-insulating GaAs substrates and followed by rapid thermal annealing (RTA) in oxygen ambient. Significant decrease in the electron concentration and increase in the hole concentration, together with the intensity enhancement of acceptor-related AoX spectral peak and the shift of bound exciton peak from DoX to AoX in the low-temperature photoluminescence spectra, were observed as the RTA temperature increased. Conversion of conductivity from intrinsic n-type to extrinsic p-type ZnO occurred at the RTA temperature of 600 °C. The p-type ZnO film with a hole concentration as high as 3.44 Ã 1020 cmâ 3 and long-term stability up to 180 days was obtained as the RTA treatment was carried out at 700 °C. The results were attributed to the diffusion of arsenic atoms from GaAs into ZnO as well as the activation of As-related acceptors by the post-RTA treatment.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yung-Chen Cheng, Ying-Shen Kuo, Yun-Hsiu Li, Jing-Jong Shyue, Miin-Jang Chen,