Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670223 | Thin Solid Films | 2011 | 7 Pages |
Abstract
ZrO2 is a potential candidate for the realization of 3D capacitors on silicon for future Systems-on-Chip. This paper reports on the deposition of ZrO2 thin films by metal-organic chemical vapor deposition on planar and 3D structures. Physico-chemical as well as electrical properties of the films are investigated. It is shown that the change of phase and microstructure of the film due to annealing at 900 °C under O2 impacts directly on the electrical performance of the capacitors. Capacitance densities are 2 nF/mm2 for planar capacitors and reach 8 nF/mm2 for capacitors with pores etched in silicon with a 4:1 aspect ratio.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Brunet, H. Mafhoz Kotb, L. Bouscayrol, E. Scheid, M. Andrieux, C. Legros, S. Schamm-Chardon,