| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670247 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠Thin Al wires fabricated by stress migration or electromigration. ⺠Similar Al2O3/Al/SiO2/Si structures were used for the preparation of thin Al wires. ⺠Comparison between stress migration and electromigration wire growth mechanism. ⺠Al thin wires also formed with a thin SiO2 layer replacing the native Al oxide layer. ⺠Potential for fabricating Al wires with controlled diameter using atomic migration.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yebo Lu, Hironori Tohmyoh, Masumi Saka,