Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670313 | Thin Solid Films | 2012 | 4 Pages |
Abstract
⺠Sol-gel derived SrTa2O6(STA) thin films showed high dielectric constants of 26-110. ⺠Crystalline and amorphous STA thin films showed different leakage current mechanisms. ⺠Dipolar relaxation caused capacitance change in the crystalline STA thin film. ⺠Amorphous STA thin films showed better capacitance stability. ⺠Electrode polarization contributed to the capacitance stability.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Li Lu, Takashi Nishida, Masahiro Echizen, Kiyoshi Uchiyama, Yukiharu Uraoka,