| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670316 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠Investigation on UV photoconductivity of ZnO nanowire field effect transistors. ⺠High-energy proton irradiation produces interface traps in a dielectric layer. ⺠Holes trapped in interface traps hinder the recombination of electron-hole pairs. ⺠Interface traps play a role in the increase in photocurrent decay time.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Minhyeok Choe, Woong-Ki Hong, Woojin Park, Jongwon Yoon, Gunho Jo, Taehyeon Kwon, Mark E. Welland, Takhee Lee,