Article ID Journal Published Year Pages File Type
10670341 Thin Solid Films 2012 5 Pages PDF
Abstract
► Ce doping increased phase-change temperature of GST from 159 to 236 °C. ► No suppression of resistivity level in amorphous Ce-doped GST. ► Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 105. ► p-type semiconducting behavior of GST was enhanced by Ce-doping. ► Ce-doping improved the thermal stability of threshold voltage of GST PCM device.
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Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films
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