Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670360 | Thin Solid Films | 2011 | 4 Pages |
Abstract
The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. Kühne, T. Hofmann, C.M. Herzinger, M. Schubert,