Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670388 | Thin Solid Films | 2011 | 6 Pages |
Abstract
Real time spectroscopic ellipsometry (RTSE) has been applied to analyze the optical characteristics of Ag/ZnO and Al/ZnO interfaces used in back-reflector (BR) structures for thin film silicon photovoltaics. The structures explored here are relevant to the substrate/BR/Si:H(n-i-p) solar cell configuration and consist of opaque Ag or Al films having controllable thicknesses of microscopic surface roughness, followed by a ZnO layer up to ~Â 3000Â Ã
thick. The thicknesses of the final surface roughness layers on both Ag and Al have been varied by adjusting magnetron sputtering conditions in order to study the effects of metal film roughness on interface formation and interface optical properties. The primary interface loss mechanisms in reflection are found to be dissipation via absorption through localized plasmon modes for Ag/ZnO and through intraband and interband transitions intrinsic to metallic Al for Al/ZnO.
Related Topics
Physical Sciences and Engineering
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Nanotechnology
Authors
Lila Raj Dahal, Deepak Sainju, N.J. Podraza, S. Marsillac, R.W. Collins,