Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics

Real time spectroscopic ellipsometry (RTSE) has been applied to analyze the optical characteristics of Ag/ZnO and Al/ZnO interfaces used in back-reflector (BR) structures for thin film silicon photovoltaics. The structures explored here are relevant to the substrate/BR/Si:H(n-i-p) solar cell configuration and consist of opaque Ag or Al films having controllable thicknesses of microscopic surface roughness, followed by a ZnO layer up to ~ 3000 Å thick. The thicknesses of the final surface roughness layers on both Ag and Al have been varied by adjusting magnetron sputtering conditions in order to study the effects of metal film roughness on interface formation and interface optical properties. The primary interface loss mechanisms in reflection are found to be dissipation via absorption through localized plasmon modes for Ag/ZnO and through intraband and interband transitions intrinsic to metallic Al for Al/ZnO.