Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670415 | Thin Solid Films | 2011 | 4 Pages |
Abstract
In this work, a rotating compensator sampling for spectroscopic imaging ellipsometry (SIE) is presented and demonstrated by characterization of a SiO2 nanofilm pattern on Si substrate. Experiment results within spectrum of 400-700 nm show that the rotating compensator sampling is valid for SIE to obtain the ellipsometric angle distributions Ï (x, y, λ) and Î (x, y, λ) over the thin film pattern, the sampling times of Ï (x, y) and Î (x, y) with 576 Ã 768 pixels under each wavelength is less than 8 s, the precision of fitting thickness of SiO2 is about 0.2 nm and the lateral resolution is 60.9 μm Ã 24.6 μm in the parallel and perpendicular direction with respect to the incident plane.
Related Topics
Physical Sciences and Engineering
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Authors
Y.H. Meng, G. Jin,