| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670431 | Thin Solid Films | 2011 | 5 Pages |
Abstract
The demand for accurate and highly reliable in-fab characterization of thin layers included in advanced CMOS and MEMS stacks has placed stringent requests on in-line optical metrology methodology and protocols. This work investigates the capability of systematic combination of X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE) to decrease the correlation concerns that sometimes affect the reliability of SE analysis.
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Authors
E. Nolot, A. André,