| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670451 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Reflectance difference spectroscopy (RDS) was applied to the characterization of SiO2/Si, GeO2/Ge, and high-k/III-V interface structures. We extended the spectral range of RDS to 8.4Â eV in order to explore the optical transitions at the dielectrics-semiconductor interfaces as well as to have a high sensitivity to the interface anisotropy. Si surfaces with (110), (113), (331) and (120) orientations showed oxidation-induced RD changes in the vacuum-ultraviolet (VUV) range which were dependent on the surface orientation, oxidation method (dry or wet), and oxidation temperature. The Ge(110) surface also showed characteristic oxidation-induced changes in the VUV range, whereas Al2O3 deposition on GaAs(001) and InP(001) surfaces induced only the RD amplitude changes.
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Authors
Shoichi Ogata, Shinya Ohno, Masatoshi Tanaka, Takahiro Mori, Tsuyoshi Horikawa, Tetsuji Yasuda,