| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670456 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Spectroscopic ellipsometry from 0.73 to 4.75 eV was used to study the optical properties of epitaxial GaAs0.9-xNxSb0.1 layers with x = 0.00, 0.65, 1.06, 1.45 and 1.90%. The ellipsometric experimental spectra were fitted using a multilayer model employing the model dielectric function to describe the GaAs0.9-xNxSb0.1 optical response. We have identified the Î-point E0, E+, and E# transitions of GaAs0.9-xNxSb0.1 and have determined the effect of nitrogen on the respective transition energies. We have demonstrated that a lower N content can provide an equal E+-E0 energy splitting for GaAs0.9-xNxSb0.1 with respect to GaAs1-xNx.
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Authors
N. Ben Sedrine, C. Bouhafs, M. Schubert, J.C. Harmand, R. Chtourou, V. Darakchieva,