Characterization of pulsed laser deposited hydrogenated amorphous silicon films by spectroscopic ellipsometry

The wide absorption band of hydrogenated amorphous silicon (a-Si:H) is being realized as a key component of solar cells on glass. In this study, a-Si:H films were prepared by reactive pulsed laser deposition onto silicon and glass substrates. Ellipsometry showed that the optical properties of the films are effectively independent on the choice of substrate. According to the optical properties, the character of the films changes from amorphous silicon to dielectric as the hydrogen background pressure increases from 0 to 25 Pa. This observation was attributed to oxygen incorporation indicated by Rutherford Backscattering Spectrometry. Furthermore, a refractive index gradient in depth was revealed, which was attributed to the oxygen concentration gradient.